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- W1972007669 abstract "Strained silicon germanium (sSiGe), as channel materials, has received a lot of attention due to its high hole mobility <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>[1]-[4]</sup> . sSi/sSiGe/sSOI heterostructure substrate <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>[5]-[8]</sup> takes the advantages of the tensile strained Si layer, and thus can increase the critical thickness for pseudomorphically grown SiGe with high Ge concentration. In this work, QW p-MOSFETs <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>[9]-[11]</sup> on sSi/sSi <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> /sSOI substrate were characterized and hole mobility was extracted, compared with QW p-MOSFETs on Si/sSi <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> Ge <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.5</sub> /SOI substrate." @default.
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- W1972007669 date "2012-05-01" @default.
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- W1972007669 title "Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi<inf>0.5</inf>Ge<inf>0.5</inf>/sSOI heterostructure" @default.
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- W1972007669 doi "https://doi.org/10.1109/iwjt.2012.6212851" @default.
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