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- W1972036210 abstract "We investigate the growth modes for GaN homoepitaxy. Several parameters have been taken into account: the growth rate, the metal/N ratio value and the substrate temperature. The observation of time variation of the RHEED diffraction pattern and the study of thick samples has permitted the determination of a phase diagram of the Ga surface coverage during GaN homoepitaxy as a function of III/V ratio and substrate temperature. Furthermore, we address the different GaN surface morphologies obtained in different regions of the phase diagram." @default.
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- W1972036210 date "2001-12-01" @default.
- W1972036210 modified "2023-09-24" @default.
- W1972036210 title "Molecular-Beam Epitaxy of GaN: A Phase Diagram" @default.
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- W1972036210 doi "https://doi.org/10.1002/1521-396x(200112)188:2<575::aid-pssa575>3.0.co;2-#" @default.
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