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- W1972057865 abstract "Selective epitaxial growth of Si- and Zn-doped GaAs was carried out by atmospheric-pressure metalorganic chemical vapor deposition. The carrier concentration of the selective epilayers changed from that of the uniformly grown epilayers: decrease in Si-doping efficiency and increase in Zn-doping efficiency in selective epitaxial growth. The main cause for these phenomena is the lateral supply of AsH 3 from SiO 2 -mask areas to GaAs-window areas, which is induced by the selective decomposition of AsH 3 ." @default.
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- W1972057865 date "1992-10-01" @default.
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- W1972057865 title "Doping Properties of GaAs Selective Epilayers Grown by Atmospheric-Pressure Metalorganic Chemical Vapor Deposition" @default.
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- W1972057865 doi "https://doi.org/10.1143/jjap.31.l1377" @default.
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