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- W1972064233 abstract "The temperature dependence of the photoconductivity kinetics during photodesorption, the stationary photoconductivity in dependence on oxygen ambient pressure, and the photoconductivity kinetics during chemisorption at various oxygen pressures were investigated using plate-like CdS single crystals possessing an accumulation-type photoconducting layer at the surface. The results suggest that (i) oxygen does not dissociate into atoms upon physical adsorption, (ii) chemisorption is a two-step process involving a precursor state, (iii) photodesorption also is a two-step process consisting of normal photodesorption followed by a thermally activated step, and (iv) oxygen in the reversible low-temperature (below ≈︁ 100 °C) chemisorption participates as O. Es wurden die Temperaturabhängigkeit des Photoleitfähigkeitsanklingens während Photodesorption, die Abhängigkeit der stationären Photoleitfähigkeit vom Sauerstoffdruck und das Photoleitfähigkeitsabklingen während Chemisorption bei unterschiedlichen Sauerstoffdrücken an plättchenförmigen CdS-Einkristallen untersucht. Die Kristalle besaßen eine gut photoleitende Schicht (von der Art einer Anreicherungsrandschicht) an der Oberfläche, was eine einfache mathematische Analyse der Ergebnisse ermöglichte. Die Ergebnisse legen nahe, daß (1) Sauerstoff bei physikalischer Adsorption an CdS-Oberflächen nicht in Atome dissoziiert, (2) Chemisorption in zwei Schritten vor sich geht, wobei vor der eigentlichen Chemisorption Sauerstoff erst an besonderen Haftzentren lokalisiert werden muß. (3) Photodesorption ebenfalls in zwei Schritten vor sich geht, wobei der üblichen Photodesorption noch ein thermisch aktivierter Schritt folgt (Befreiung aus den Haftzentren), und (4) Sauerstoff bei der reversiblen Chemisorption (unter 100 °C) nahe Raumtemperatur als O chemisorbiert wird." @default.
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- W1972064233 date "1970-04-16" @default.
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- W1972064233 title "Room-temperature chemisorption mechanism of oxygen at CdS surfaces by photoconductivity investigations" @default.
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