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- W1972078007 abstract "Single-crystal films of WO3 on MgO and sapphire substrates have been grown by the r.f. magnetron sputtering method. The crystal orientation of the films depends remarkably on the substrate material and the oxygen concentration in the sputtering gas. The film grown on the (100)-oriented MgO substrate had an orientation of WO3(001) along the growth direction in a 60% concentration of O2. The films grown on the (1120)-oriented sapphire had orientations of WO3(001) in 70% O2 and WO3(021) in 60% O2. The films grown on the (0001)- and (1102)-oriented sapphire substrate had orientations WO3(021) and WO3(001) respectively. The temperature dependence of the electrical properties was measured for the films on the MgO substrate. Oxygen defects in the film give rise to the electrical conduction, although the X-ray analysis shows that the sample is perfectly crystalline. When the sample was heated in the oxygen atmosphere it became an insulator." @default.
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- W1972078007 date "1989-01-01" @default.
- W1972078007 modified "2023-10-18" @default.
- W1972078007 title "Epitaxial growth of WO3 thin films on MgO and Al2O3" @default.
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- W1972078007 doi "https://doi.org/10.1016/0040-6090(89)90696-2" @default.
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