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- W1972118891 abstract "Within this contribution, results for a laser structure consisting of InP quantum dots embedded in an (AlxGa1-x)0.51In0.49P matrix lattice matched to GaAs are presented. The structure was fabricated using metal–organic vapor-phase epitaxy, showing electrically pulsed laser operation at room temperature with a low threshold current density of 870 A/cm2 and a lasing wavelength of 638 nm for a 2000 µm long device with uncoated facets. Optical output powers of more than 55 mW per facet and lasing up to 313 K is demonstrated." @default.
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- W1972118891 date "2009-11-06" @default.
- W1972118891 modified "2023-09-26" @default.
- W1972118891 title "Low Threshold InP/AlGaInP Quantum Dot In-Plane Laser Emitting at 638 nm" @default.
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- W1972118891 doi "https://doi.org/10.1143/apex.2.112501" @default.
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