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- W1972122017 abstract "We have studied the mechanisms of the copper metallization on P-silicon wafers immersed in CuCN solutions, using photoelectrochemical measurements and optical/electron microscopy. In this process the electroplating is enhanced by the minority carries in illuminated areas of the silicon. cathode. The photo-selective deposition with high resolution have been obtained only on low doped P-silicon. The kinectics of the film growth is strongly dependent on the film thickness, and two mechanisms have been identified. Patterns of resolution of ~4 microns can be realized only with thickness bellow ~20 nm. Further investigation is needed for prevent the oxidation of the as-deposited film." @default.
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- W1972122017 date "1990-02-05" @default.
- W1972122017 modified "2023-10-03" @default.
- W1972122017 title "Photoelectrochemically Induced Copper Deposition On P-Silicon Electrodes From CuCN Solutions" @default.
- W1972122017 doi "https://doi.org/10.1117/12.963924" @default.
- W1972122017 hasPublicationYear "1990" @default.
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