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- W1972135525 abstract "We have studied the agglomeration mechanism of impurity B ions due to a high-dose ion implantation into Si, making use of a defect analysis performed with a molecular dynamic simulation. Beyond a threshold level of impurity concentration, ion irradiation drastically changes the spatial distribution of crystal atoms, which promotes the agglomeration significantly. The lattice reaction for the ion impact was often synergistic and depended strongly on the temperature of the host target, even with the same condition of irradiation energy. At a temperature of 100 K, the agglomeration once increased then decreased, because dissociation took it over. Above 200 K, however, the agglomeration progressed with ion impact. Such an analysis was possible by means of pixel mapping that showed the long-range interactions between atoms in a crystal." @default.
- W1972135525 created "2016-06-24" @default.
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- W1972135525 date "2001-12-01" @default.
- W1972135525 modified "2023-09-30" @default.
- W1972135525 title "The control mechanism of the impurity agglomeration triggered by ion impacts" @default.
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- W1972135525 doi "https://doi.org/10.1016/s0921-4526(01)00793-1" @default.
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