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- W1972137497 abstract "A concept of a synchrotron radiation (SR) beam line and illumination system to be used for extreme-ultra-violet lithography (EUVL) is proposed. The SR in this case is bending radiation, and the electron energy of a storage ring is 500MeV, the bending magnetic field 1.5T, and the stored current 1A. The radiation in 30^o is collected by 4 aspheric mirrors and brought to a mask ring-field through 4 pieces of multi-layer mirrors and a grazing-incidence mirror. The total power for EUVL is 5.3W. The beam line design including vacuum system and radiation shielding structure is studied. The power level at the wafer can be as high as 15 mW/cm^2 depending on mirror collection efficiency and windows to be used." @default.
- W1972137497 created "2016-06-24" @default.
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- W1972137497 date "2000-06-01" @default.
- W1972137497 modified "2023-09-27" @default.
- W1972137497 title "A proposal of high power EUV lithography illumination system using synchrotron radiation" @default.
- W1972137497 cites W1672911329 @default.
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- W1972137497 doi "https://doi.org/10.1016/s0167-9317(00)00400-7" @default.
- W1972137497 hasPublicationYear "2000" @default.
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