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- W1972137633 abstract "For InSb, hole concentrations up to mid-1020 cm−3 were obtained at growth temperatures up to 450°C. This is believed to be the highest hole concentration yet reported for p-InSb. The hole concentration was found to be dependent on dopant flux and V/III ratio but not on growth temperature. Attempts to increase the hole concentration beyond this level resulted in severe degradation of the surface morphology. For InAs, all growth conditions used with elemental In produced compensated n-type material. High CBr4 fluxes also led to severe parasitic etching. By contrast, the use of metalorganic In precursors such as triethylindium (TEI) appear to enhance the ability of carbon to incorporate on the group V rather than the group III sublattice, making the attainment of highly compensated p-type material possible, but only in a narrow range of growth conditions." @default.
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- W1972137633 date "1998-06-01" @default.
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- W1972137633 title "Doping of InSb and InAs using CBr4 during growth by gas source molecular beam epitaxy" @default.
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- W1972137633 doi "https://doi.org/10.1016/s0022-0248(98)00087-6" @default.
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