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- W1972156955 abstract "High energy argon ion implantation was used to form, in intentionally gold or platinum contamined silicon samples, a buried layer of efficient gettering sinks with low damage creation close to the surface. In any case, the implantation temperature was chosen to avoid partial or complete amorphization. Both nature and long term stability of these centers have been determined by Transmission Electron Microscopy (TEM) and channeling measurements. The kinetics of gold accumulation on these sinks was measured using high sensitivity Rutherford Backscattering (RBS) analysis as a function of implantation dose and annealing temperature. The effect of initial metallic contamination concentration was also investigated. The results are discussed using a model which takes into account a trapping-detrapping reaction and an impurity dependent annealing behaviour of the gettering sites." @default.
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- W1972156955 date "1996-05-01" @default.
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- W1972156955 title "Kinetics of impurity gettering on buried defects created by MeV argon implantation" @default.
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- W1972156955 doi "https://doi.org/10.1016/0168-583x(95)01014-9" @default.
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