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- W1972175418 abstract "The multilevel switching characteristics of stacked phase change materials with the structures of Ge 2 Sb 2 Te 5 , AgInSbTe/Ge 2 Sb 2 Te 5 , and GeTe/Ge 2 Sb 2 Te 5 were investigated at the nano scale using nanoimprint lithography and conductive atomic force microscopy. Stacked phase change materials devices consisting of nano pillars 200 nm in diameter were fabricated using nanoimprint lithography, and their electrical characteristics were evaluated using conductive atomic force microscopy, with a pulse generator and a voltage source. The stacked GeTe/Ge 2 Sb 2 Te 5 phase change materials exhibited three levels of resistance with a difference of 2 orders in magnitude between them, while the single-layer and stacked phase change materials with similar electrical resistances, such as Ge 2 Sb 2 Te 5 /AgInSbTe exhibited only bi level switching characteristics." @default.
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- W1972175418 date "2011-08-01" @default.
- W1972175418 modified "2023-09-24" @default.
- W1972175418 title "Fabrication of Multilevel Switching High Density Phase Change Data Recording Using Stacked GeTe/GeSbTe Structure" @default.
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- W1972175418 doi "https://doi.org/10.1143/jjap.50.081201" @default.
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