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- W1972254126 abstract "We investigated effect of reducing thickness of TiN buffer layers on growth of the smooth GaN layers. The sputtered TiN layers with thicknesses in the range of 2 to 100 nm were deposited on sapphire substrates. The sputtered TiN layers were exposed NH3 + H2 mixed gas atmosphere at about 1000°C to enrich nitrogen concentration of the layers. GaN layers were deposited on the nitrogen-enriched TiN layer using a MOCVD method. Average grain size of the nitrogen-enriched TiN layer was minimized at the thickness of 5 nm. In the initial stages of GaN growth, density of GaN hexagons grown on the 5nm-thick TiN layers was the highest. The 2μm-thick GaN layers grown on the 5nm-thick TiN layers exhibited the smoothest surface. Thus, the 5nm thickness is believed to be the best thickness for the smooth GaN growth on the sapphire/TiN substrates." @default.
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- W1972254126 date "2007-10-01" @default.
- W1972254126 modified "2023-10-18" @default.
- W1972254126 title "Effect of Reducing Thickness of TiN Buffer Layers on Epitaxial Growth of GaN Layes" @default.
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- W1972254126 doi "https://doi.org/10.4028/www.scientific.net/msf.561-565.1217" @default.
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