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- W1972261584 abstract "Various amorphous semiconductor thin-film structures were investigated by electron-gas sputtered neutral mass spectrometry (SNMS) and secondary ion mass spectrometry (SIMS). For the latter technique, cesium bombardment in conjunction with the detection of positive MCs+ secondary ions (M stands for the element of interest) were employed. Using this detection scheme, quantification is demonstrated for a series of a-SixGe1-x:H samples. Data obtained on more complex pin-multilayers indicate generally a good agreement between SNMS and SIMS; while MCs+ SIMS is more sensitive for many elements, mass interferences can limit the analytical applicability of MCs+ molecular secondary ions." @default.
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- W1972261584 date "1993-06-01" @default.
- W1972261584 modified "2023-09-25" @default.
- W1972261584 title "Comparative SIMS and SNMS analyses of amorphous semiconductor thin films" @default.
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- W1972261584 doi "https://doi.org/10.1016/0169-4332(93)90395-r" @default.
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