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• W1972316256 abstract "Abstract Transparent p–n heterojunction diodes based on oxide semiconductors were fabricated by RF magnetron sputtering on alkali-free glass substrates below 500 °C. 3% Al-doped ZnO (∼400 nm) was deposited as an n-type component, and SrCu 2 O 2 (∼290 nm) as a p-type component. Sn-doped In 2 O 3 (∼190 nm) and 7% V-doped Ni metals (∼13 nm) were deposited as n- and p-type electrodes at room temperature, respectively. XRD pattern revealed the as-deposited n-/p-components were single phases. 3% Al-doped ZnO as an n-type component was deposited under 10% O 2 in Ar atmosphere at 400 °C, and showed a conductivity of 0.43 S/cm, carrier density of 10 17 /cm 3 order. SrCu 2 O 2 as a p-type component were deposited under 1% H 2 in Ar atmosphere at 500 °C, and showed a conductivity of 0.078 S/cm, carrier density of 10 17 /cm 3 order. The as-deposited p–n heterojunction diode had a total thickness of 895 nm and showed very high optical transparency of about 69% at 550 nm. I – V measurement of the multilayered transparent p–n heterojunction diode exhibited rectifying characteristics, but the turn-on voltage was somewhat obvious depending on the sample preparation condition. A plausible explanation on the rectifying characteristics of the transparent p–n junction diodes will be suggested." @default.
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• W1972316256 date "2012-01-01" @default.
• W1972316256 modified "2023-10-17" @default.
• W1972316256 title "Fabrication of transparent p–n junction diode based on oxide semiconductors deposited by RF magnetron sputtering" @default.
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• W1972316256 doi "https://doi.org/10.1016/j.ceramint.2011.05.111" @default.
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