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- W1972376170 abstract "Measurements of absolute Si L23 Auger emission yields are compared with computer simulations in the case of 40 keV argon irradiation of amorphous and monocrystalline silicon. A model parameter adjustment was found which allows a fair comparison between the incidence-angle dependence of the Auger yield obtained by simulation and experimentally. As in the case of aluminium, studied previously, the neutralization of sputtered ions had to be taken into account. A Hagstrum process is assumed with an energy dependence of the characteristic velocity. Lattice effects on both atomic- and bandlike emission are observed and calculated, which are not significantly affected by thermal atomic displacements. The enhancement of the Auger yield observed experimentally with the transition from the amorphous to the single-crystal phases is well reproduced by computer simulation, except for normal incidence. In this latter case, the calculated Auger yields for both amorphous and monocrystalline surfaces do not differ strongly." @default.
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- W1972376170 date "1990-03-01" @default.
- W1972376170 modified "2023-10-18" @default.
- W1972376170 title "Argon-induced Auger emission from amorphous and crystalline silicon: A comparison between experiment and simulation" @default.
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- W1972376170 doi "https://doi.org/10.1016/0168-583x(90)90197-3" @default.
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