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- W1972394520 abstract "Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed." @default.
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- W1972394520 date "2014-07-01" @default.
- W1972394520 modified "2023-09-30" @default.
- W1972394520 title "Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology" @default.
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- W1972394520 doi "https://doi.org/10.1116/1.4882173" @default.
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