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- W1972423551 abstract "The structural and electrical characteristics resulting from an interfacial layer of Hf-aluminate films grown by atomic layer deposition were investigated using medium energy ion scattering spectroscopy and electrical measurements. The Hf-aluminate films with an interfacial layer of grew with higher Hf contents and lower interdiffusion of Si than the film without an interfacial layer. In Hf-aluminate films with an interfacial layer of , the thickness of decreased slightly after postannealing as a result of crystallization. In films without an interfacial layer of , the structural rearrangement was observed due to the interdiffusion of Si with no change in thickness. The structural changes affected electrical properties such as the oxide trap charge and the interfacial trap charge. Moreover, reoxidation of the Hf-aluminate films without an interfacial layer of caused a dramatic increase in the thickness of the interfacial region. This resulted in a positive shift of flatband voltage." @default.
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- W1972423551 date "2005-01-01" @default.
- W1972423551 modified "2023-09-26" @default.
- W1972423551 title "Hf-Aluminate Films With and Without an Interfacial Layer during Growth and Postannealing" @default.
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- W1972423551 doi "https://doi.org/10.1149/1.2041334" @default.
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