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• W1972461444 abstract "We investigate the initial stages of growth of TiO2 films prepared by plasma-enhanced chemical vapor deposition on plasma pre-oxidized c-Si, using in situ real-time spectroscopic ellipsometry. The optical properties of TiO2 films were parameterized from 245 to 1000 nm using the Tauc–Lorentz oscillator and the effective medium approximation. For thin films grown at low substrate temperature (Ts=75 °C) and deposition rate (0.3<r<3.5 Å/s), effective refractive index (n550 at λ=550 nm) stabilization, consistent with island coalescence, was observed for thickness, d, of only 12–15 Å, independent of r. When compared at final thickness (d∼85 Å), all films possessed similar optical properties in the visible (n550=2.30–2.33), with most significant differences in n(λ) and k(λ) observed in the interband region (λ<385 nm). A thicker film (d=700 Å) grown at r=3.5 Å/s was found to exhibit similar growth behavior for d<85 Å. An additional n550 increase in the order of 0.03 observed for 85<d<280 Å, was attributed to refractive index inhomogeneity." @default.
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• W1972461444 date "2004-01-01" @default.
• W1972461444 modified "2023-10-04" @default.
• W1972461444 title "Study of TiO2 film growth mechanisms in low-pressure plasma by in situ real-time spectroscopic ellipsometry" @default.
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• W1972461444 doi "https://doi.org/10.1016/j.tsf.2003.09.019" @default.
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