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• W1972487765 abstract "Several process steps (in particular, those requiring the use of plasma) can lead to severe oxide damage. To reduce the latter, a high temperature anneal is usually performed at the end of the manufacturing process. We are investigating the use of deuterium instead of hydrogen for this anneal step. Anneal in deuterium results in improved passivation of the process-induced damage, and in lower degradation of devices during subsequent electrical stress." @default.
• W1972487765 created "2016-06-24" @default.
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• W1972487765 date "2005-01-01" @default.
• W1972487765 modified "2023-09-25" @default.
• W1972487765 title "Effect of deuterium anneal on thin gate oxide reliability" @default.
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• W1972487765 doi "https://doi.org/10.1109/icicdt.2005.1502612" @default.
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