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• W1972494903 abstract "The atomic-scale morphology of singular, vicinal and high-index surfaces and their growth mechanisms during molecular beam epitaxy (MBE) have been studied by reflection high-energy electron diffraction (RHEED). The growth mechanism of the singular GaAs (001) surface is governed by a competition between layer-by-layer growth and kinetic roughening. On vicinal GaAs (001) surfaces tilted toward the (111) As plane the terrace width fluctuations increase with the decrease in misorientation, although a step flow mechanism is maintained. The GaAs (311) Ga surface shows a unique behaviour. After breaking up into {331} facets, the well-ordered corrugated surface reproduces during growth, since neither nucleation nor diffusion processes over long distances are essential. On single-layer stepped Si (001) surfaces misoriented toward [110], a preferential incorporation of Si atoms in one of the inequivalent step types is possible even for low tilt angles. It is, however, hindered by arsenic adsorption." @default.
• W1972494903 created "2016-06-24" @default.
• W1972494903 creator A5006792914 @default.
• W1972494903 date "1993-02-01" @default.
• W1972494903 modified "2023-09-27" @default.
• W1972494903 title "RHEED studies of steps, islanding and faceting on singular, vicinal and high-index surfaces" @default.
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• W1972494903 doi "https://doi.org/10.1016/0022-0248(93)90766-p" @default.
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