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- W1972503337 abstract "Direct sulfurization of GaAs surfaces by treatment with P2S5/(NH4)2SX was employed to yield gate insulating layers for a depletion-type recessed gate GaAs metal–insulator–semiconductor-like pseudomorphic high-electron mobility transistor (MIS-like pHEMT). The novel P2S5/(NH4)2SX-treated GaAs provided a lower surface roughness and more Ga–S bonds than the traditional (NH4)2SX-only sulfurized GaAs; these bonds improved device uniformity and reduced the surface states that are induced by native Ga–O bonds. The diffusion of S atoms from P2S5/(NH4)2SX sulfurization simultaneously suppressed the drain-to-source current (Ids). The Schottky gate reverse leakage current was suppressed, resulting in a higher breakdown voltage, when this sulfurized GaAs insulator was used. Based on the dc and 1 µs pulse I–V measurement results, P2S5/(NH4)2SX-treated GaAs MIS-like pHEMTs exhibited identical Ids trends; however, conventional NH4OH-treated pHEMT exhibited an obvious decline in current upon pulse measurement because of the higher surface traps. These results were consistent with the characterization of this insulating film." @default.
- W1972503337 created "2016-06-24" @default.
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- W1972503337 date "2008-02-21" @default.
- W1972503337 modified "2023-10-18" @default.
- W1972503337 title "GaAs pseudomorphic HEMT with insulating gate films formed by P2S5/(NH4)2SX sulfurization of recessed GaAs surface" @default.
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- W1972503337 doi "https://doi.org/10.1088/0268-1242/23/3/035029" @default.
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