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• W1972505843 endingPage "L388" @default.
• W1972505843 startingPage "L388" @default.
• W1972505843 abstract "Electrical properties of a heterojunction between a p-type polycrystalline diamond and n-type hydrogenated amorphous silicon (a-Si:H) are described for the first time. The current( I )-voltage( V ) characteristics of the p-n heterojunction show good rectification, and the capacitance( C )-voltage( V ) characteristics show an approximate linear C -2 - V relationship in the reverse bias condition. These results and other experimental evidence have confirmed that the rectification is caused by the depletion layer in the vicinity of the junction." @default.
• W1972505843 created "2016-06-24" @default.
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• W1972505843 date "1992-04-01" @default.
• W1972505843 modified "2023-09-25" @default.
• W1972505843 title "Polycrystalline Diamond/Hydrogenated Amorphous Silicon P-N Heterojunction" @default.
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• W1972505843 doi "https://doi.org/10.1143/jjap.31.l388" @default.
• W1972505843 hasPublicationYear "1992" @default.
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