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- W1972533682 abstract "The boron concentration of boron-doped CVD and boron-implanted, thermally grown SiO2 films has been determined using SIMS. In the SIMS study two procedures have been employed to determine the concentration-depth profile, one using the boron concentration obtained by methods other than SIMS (i.e. IR absorption and ion implantation), and the other using the secondary-ion current versus sputtering time distributions for Si+ and B+ and the ratio alpha +(11B)/ alpha +(28Si) (where alpha +(11B) and alpha +(28Si) are degrees of ionisation for B and Si respectively). The alpha +(11B)/ alpha (28Si) ratio was experimentally determined both for CVD and for boron-implanted, thermally grown SiO2 films." @default.
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- W1972533682 date "1983-01-14" @default.
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- W1972533682 title "Quantitative boron determination in doped SiO2films by SIMS" @default.
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- W1972533682 doi "https://doi.org/10.1088/0022-3727/16/1/010" @default.
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