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- W1972555768 abstract "Abstract Coatings containing tungsten, silicon and nitrogen (of three different compositions) were deposited by reactive sputtering from a tungsten target, which was embedded with silicon plates. Increasing partial pressures of nitrogen were used. All the coatings had an as-deposited amorphous structure. These were then subjected to thermal annealing treatment at increasing temperatures. The film with the lowest nitrogen content (W 41 Si 41 N 18 ) crystallised as W 5 Si 3 at an annealing temperature of 750°C; whereas for the other two coatings, W 31 Si 36 N 33 and W 26 Si 28 N 46 , crystallisation took place at 950°C. In these two cases W 5 Si 3 and α-W phases were detected. The hardness of the films increased after thermal annealing, reaching values as high as 45 GPa in films with a high nitrogen content." @default.
- W1972555768 created "2016-06-24" @default.
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- W1972555768 date "2000-01-01" @default.
- W1972555768 modified "2023-10-17" @default.
- W1972555768 title "Mechanical behaviour of amorphous W–Si–N sputtered films after thermal annealing at increasing temperatures" @default.
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- W1972555768 doi "https://doi.org/10.1016/s0257-8972(99)00533-2" @default.
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