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- W1972694855 abstract "Silicon photon detectors and focal plane arrays (FPAs) are fabricated in many varieties<sup>1,2</sup>. Their function depends on the detector architecture, dopants, and operating temperature. DRS has fabricated silicon pin detectors that cover the visible spectral range and blocked impurity band (BIB) detectors that cover the very-long-wavelength infrared (VLWIR) region<sup>3</sup>. Imaging arrays of silicon pin-diodes utilize the intrinsic bandgap of silicon to provide high photo response over the 0.4 – 1.0 μm spectral range. The detectors operate at or near room temperature as required. Silicon <i>pin</i>-diode arrays are particularly attractive as an alternative to charge-coupled devices (CCDs) for space applications where radiation hardening is needed. Pros and cons of CCD and pin diode architectures are listed in Reference<sup>4</sup>." @default.
- W1972694855 created "2016-06-24" @default.
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- W1972694855 date "2012-10-15" @default.
- W1972694855 modified "2023-09-26" @default.
- W1972694855 title "Siliconpindiodes for remote sensing" @default.
- W1972694855 cites W2040898971 @default.
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- W1972694855 doi "https://doi.org/10.1117/12.970311" @default.
- W1972694855 hasPublicationYear "2012" @default.
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