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- W1972767701 abstract "We demonstrate a steady-state measurement technique of measuring dark current in HgCdTe metal–insulator–semiconductor (MIS) devices, implementing a gated diode. We show that this technique has several advantages over conventional MIS dark current measurement methods. Using this technique we are able to observe subbands due to inversion layer quantization, hence demonstrating a new technique of subband spectroscopy. The tunnel current into these bands is monitored as a function of temperature to deduce the nature of the tunneling transition." @default.
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- W1972767701 date "1991-05-01" @default.
- W1972767701 modified "2023-09-23" @default.
- W1972767701 title "Subband spectroscopy and steady-state measurement of dark current in metal–insulator–semiconductor devices" @default.
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- W1972767701 doi "https://doi.org/10.1116/1.585412" @default.
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