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- W1972889920 abstract "This paper reports on the features of silicon nanowires (SiNWs) formed by metal-assisted chemical etching of crystalline silicon in AgNO3-based chemical solutions. Scanning electron microscopy (SEM) shows that the SiNWs may have different structures and porosities depending on the preparation conditions. Porous SiNWs reduce the surface effective reflectivity to less than 3% in the UV-blue spectral region. Although it was commonly reported that preferential etching is performed along Si 〈1 0 0〉 orientations, we found that SiNWs can grow along several directions depending on the oxidant (AgNO3) concentration. We show that the reaction mechanism leading to the formation of the SiNWs is principally governed by redox charge transfer in HF/AgNO3 solutions. However, the formation of porous SiNWs was found to decrease the minority carrier lifetime, which is in turn problematic to achieve high efficiency silicon solar cells." @default.
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- W1972889920 date "2014-03-01" @default.
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- W1972889920 title "Formation mechanism of porous silicon nanowires in HF/AgNO3 solution" @default.
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- W1972889920 doi "https://doi.org/10.1016/j.micromeso.2013.11.048" @default.
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