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- W1972898396 abstract "The incorporation of tin in GaAs layers grown by low pressure MOVPE has been studied as a function of substrate temperature and reactant gas molar fractions. The variation of the carrier concentration has been analyzed to characterize the dominant mechanisms of tin incorporation. It is found that n-type doping can be achieved for 4.3 × 1015 ⩽ n ⩽ 1 × 1019 cm-3 without introducing measurable amounts of Sn acceptors and that the doping process is controlled by the decomposition rate of tetramethylin. High mobilities have been measured in layers with 5 × 1016 ⩽ n ⩽ 1019 cm-3. At low n the mobility is limited by residual acceptors whereas above 1019 cm-3 crystallographic defects and the incorporation of Sn atoms as acceptors reduce the mobility. Negligible Sn surface accumulation has been observed in layers grown under optimized condition even for n ⩾ 2 × 1018 cm-3." @default.
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- W1972898396 date "1984-09-01" @default.
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- W1972898396 title "Tin incorporation in GaAs layers grown by low pressure MOVPE" @default.
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- W1972898396 doi "https://doi.org/10.1016/0022-0248(84)90399-3" @default.
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