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- W1972901614 abstract "The thermal stability and the atomic ordering of single-crystal Heusler alloy Co2FeSi layers grown by molecular beam epitaxy on GaAs(001) have been studied. We found that the Co2FeSi layers have a long-range atomic order and crystallize in a partly disordered L21 structure in the low growth temperature (TG) regime. The long-range atomic order of the layers is further improved with increasing TG up to 350°C. However, the increase of TG induces an interfacial reaction between the Co2FeSi layer and the GaAs substrate. The analysis of the in-plane magnetic anisotropy reveals that the interface perfection is improved up to TG=200°C and deteriorated due to an interfacial reaction above 200°C." @default.
- W1972901614 created "2016-06-24" @default.
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- W1972901614 date "2005-11-15" @default.
- W1972901614 modified "2023-10-13" @default.
- W1972901614 title "Thermal stability and atomic ordering of epitaxial Heusler alloy Co2FeSi films grown on GaAs(001)" @default.
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- W1972901614 doi "https://doi.org/10.1063/1.2136213" @default.
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