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• W1972941363 abstract "We reported separate absorption and multiplication InAlAs/InGaAs avalanche photodiodes with a p-type multiplication layer. Wedge-shaped electric field profiles with different gradients and peak intensities confined in a thin InAlAs avalanche layer were realized. These devices showed optimum operating gains up to 40 in linear mode with low operating voltages <;20 V, small gain slopes, and high-gain uniformity. Moreover, a reduced breakdown voltage temperature coefficient <;6 mV/K in the temperature range of 200-350 K was observed, whereas the dark current showed a noticeable increase. Those multiplication performances are attributed to the modified electric field profiles and are ideally suitable for focal plane array imaging applications." @default.
• W1972941363 created "2016-06-24" @default.
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• W1972941363 date "2015-03-15" @default.
• W1972941363 modified "2023-10-16" @default.
• W1972941363 title "Low Operating Voltage and Small Gain Slope of InGaAs APDs With p-Type Multiplication Layer" @default.
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• W1972941363 doi "https://doi.org/10.1109/lpt.2015.2389819" @default.
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