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• W1973005188 abstract "The effect of microwave irradiation process on crystallization of Pb(Zr x Ti 1-x )O 3 (PZT) films was investigated. The PZTthin films were coated on Pt/Ti/SiO 2 /Si substrates by a sol-gel method and then crystallized by single-mode 2.45 GHzmicrowave irradiation in the magnetic field at 500°C for 30 min and 650°C for 60 s, respectively. The crystalline phases,microstructures and electrical properties of the PZT films are investigated. X-ray diffraction analysis indicated that boththe films heated by microwave irradiation at 500°C for 30 min and those at 650°C for 60 s were crystallized well into theperovskite phase. However, the PZT films crystallized at 500°C for 30 min had a (100)-preferred orientation while thePZT films crystallized at 650°C for 60 s had a (111)-preferred orientation. The average values of remanent polarization,coercive field, dielectric constant and loss of the PZT films crystallized at 500°C for 30 min are approximately 21μC/cm 2 , 90 kV/cm, 510 and 0.07 respectively, whereas the PZT films crystallized at 650°C for 60 s are approximately 27μC/cm 2 , 82 kV/cm, 900 and 0.05 respectively. The difference between the electrical properties of the PZT filmscrystallized by deferent process can be related to the microstructure effect." @default.
• W1973005188 created "2016-06-24" @default.
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• W1973005188 date "2009-07-25" @default.
• W1973005188 modified "2023-09-23" @default.
• W1973005188 title "Microwave irradiation of lead zirconate titanate thin films" @default.
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• W1973005188 doi "https://doi.org/10.1117/12.839949" @default.
• W1973005188 hasPublicationYear "2009" @default.
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