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- W1973014770 abstract "Defect levels in semi-insulating GaAs and InP are investigated by deep level photodiffractive spectroscopy. Temperature-dependent four-wave mixing based both on photochromic and photorefractive effects permits a determination of the energy levels within the semiconductor band gap. This optical technique eliminates difficulties encountered with high-resistivity material using conventional electrical measurements." @default.
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- W1973014770 date "1990-01-08" @default.
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- W1973014770 title "Deep level photodiffractive spectroscopy of semiconductors" @default.
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- W1973014770 doi "https://doi.org/10.1063/1.103038" @default.
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