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- W1973018977 abstract "Some high melting point metals, such as vanadium, are promising alternatives to copper as alloying elements in AlSi films for the realization of an electromigration-resistant material. We have studied the effect of the addition of 0.6% V in Al99Si1 (all numbers in atomic per cent) on the electromigration resistance by measurements of the drift velocity. This method allows a rapid qualification (typically 20–200 h) of a material using low current densities (less than 3 × 105 A cm−2) and only slightly elevated temperatures (below 200 °C). The metallization patterns for the drift velocity measurements were etched in a bilayer consisting of a 0.5microm thick aluminium alloy deposited on top of a tungsten-rich W-Ti layer having the same thickness. The test lines had both different lengths (5–180 microm) and different widths. In this paper first results of drift velocity measurements on uncovered 4 and 10 microm wide AlSi and AlVSi metallization stripes, together with a lifetime test of the latter alloy, are presented. It will be demonstrated that the incorporation of vanadium in AlSi has a dramatic effect on the morphology in the region where depletion takes place, i.e. the formation of holes near the cathode end is prohibited." @default.
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- W1973018977 date "1990-12-01" @default.
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- W1973018977 title "Electromigration phenomena in AlSi and AlVSi thin alloy films" @default.
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- W1973018977 doi "https://doi.org/10.1016/0040-6090(90)90255-c" @default.
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