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• W1973019478 abstract "H2O or NH4OH (5%) precursor pretreatment in the chamber was carried out before the thermal atomic layer deposition (ALD) of an Al2O3 passivation layer on p-type crystal Si. It was found that the density of negative oxide fixed charges significantly increased, the Al–O combination at the interface changed, the Al/O atomic at the interface of Al2O3/Si decreased, and the effective lifetime increased. The pretreated samples with changes in the Al–O structure at the interface, which made the interface more oxygen-rich, were believed to be the reason for the improvement of the field effect passivation in Al2O3 passivated crystal Si solar cell applications." @default.
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• W1973019478 date "2014-07-17" @default.
• W1973019478 modified "2023-09-26" @default.
• W1973019478 title "Effect of surface pretreatment in the thermal atomic layer deposition of Al2O3for passivation of crystal Si solar cells" @default.
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• W1973019478 doi "https://doi.org/10.7567/jjap.53.08lc04" @default.
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