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• W1973050794 abstract "Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device." @default.
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• W1973050794 date "2007-07-01" @default.
• W1973050794 modified "2023-10-17" @default.
• W1973050794 title "A non-volatile-memory device on the basis of engineered anisotropies in (Ga,Mn)As" @default.
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• W1973050794 doi "https://doi.org/10.1038/nphys652" @default.
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