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- W1973108238 abstract "Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al2O3, ZrO2, Y2O3, and La2O3 thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current–density as low as 3×10−7 A/cm2, a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La2O3. ZrO2 and notably Al2O3 show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy." @default.
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- W1973108238 date "2013-10-01" @default.
- W1973108238 modified "2023-10-17" @default.
- W1973108238 title "ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell" @default.
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- W1973108238 doi "https://doi.org/10.1016/j.solmat.2013.04.028" @default.
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