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- W1973150882 abstract "By means of two-dimensional device simulator, the effects of vanadium-compensated concentration on the electrical characteristics of 6H SiC photoconductive semiconductor switches (PCSS) are explored. In the simulator, the model of PCSS is an n-type device doped with 1×1014 cm−3, and is compensated by vanadium (V). Under a bias of 1500 V, the dark current in case of V-concentration of 1×1012 cm−3 is 1 A, and decreased to 5×10−7 A for V-concentration of 1×1015 cm−3. Illuminated by 0.4 um incident light with a power of 2500 W/cm−2, the peak current in case of V-concentration of 1×1012 cm−3 is 160 A, and decreased to 6 A for V-concentration of 1×1015 cm−3. The spectral responsivity of 6H SiC PCSS is maximized in 0.3875 um with a value of 4.8 mA/W under a bias of 1500 V. From the results, the V-concentration should be chosen to achieve the insulation characteristics and photocurrent according to the doped concentration." @default.
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- W1973150882 date "2012-06-01" @default.
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- W1973150882 title "Effects of vanadium-compensated concentration on the electrical characteristics of 6H-SiC photoconductive semiconductor switches" @default.
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- W1973150882 doi "https://doi.org/10.1109/ipemc.2012.6258984" @default.
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