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- W1973157455 abstract "A series of GaAs1−xPx-Ge heterojunctions has been fabricated by a vapor phase epitaxial growth technique to investigate the opto-electronic properties of the wide-to-narrow gap heterojunction, and particularly, their wide-range of spectral photosensitivity. Epitaxial GaAs1−xPx crystal layers over a wide-range of composition x were grown on Ge substrates using the Ga-AsCl3-PCl3-H2 system. A new fabrication technology suitable for making good quality heterojunctions has been developed by separating the reaction process into two steps (mixed source deposition and epitaxial growth). This remarkably reduced the vapor etching reaction of the Ge substrate and minimized the contamination by cross diffusion. The stoichiometric and crystalline quality examinations of epitaxial layers were made by fluorescent X-ray analysis, EPMA, SEM and a four circle diffractometer. A series of electrical and opto-electronic measurements were made to evaluate the junction properties. The n-p heterojunction fabricated has a good rectification characteristics with a step-like impurity profile. A very wide spectral photoresponse having a wave length region from 0.35 μm to 2.0 μm has been obtained with a sensitivity about 10 times or more as great as that of a Ge p-n homojunction in the higher energy region (>2.0 eV)." @default.
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- W1973157455 date "1974-10-01" @default.
- W1973157455 modified "2023-09-26" @default.
- W1973157455 title "Epitaxial vapor growth of GaAs1−xPx on germanium substrates and their opto-electronic properties" @default.
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- W1973157455 doi "https://doi.org/10.1016/0022-0248(74)90313-3" @default.
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