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• W1973169654 abstract "The relative abundance of native point defects in cubic SiC has been studied via ab initio calculations as a function of composition and the Fermi-level position. For Si-rich cubic SiC, the ${mathrm{Si}}_{mathrm{C}}$ antisite is the dominant defect in $n$-type material, while the carbon vacancy, which is a double donor, dominates in $p$-type material. These results explain the experimentally observed low doping efficiencies of acceptors and the strong self-compensation effects in Si-rich cubic SiC. In C-rich SiC, the dominant defect is the electrically inactive ${mathrm{C}}_{mathrm{Si}}$ antisite, regardless of the position of the Fermi level. The slightly C-rich cubic SiC is thus a more suitable material for $p$-type doping." @default.
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• W1973169654 date "1988-12-15" @default.
• W1973169654 modified "2023-09-25" @default.
• W1973169654 title "Formation energies, abundances, and the electronic structure of native defects in cubic SiC" @default.
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• W1973169654 doi "https://doi.org/10.1103/physrevb.38.12752" @default.
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