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• W1973170819 abstract "Thin oxynitride gate dielectric films were prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride at temperature ranging 850–1050 °C. X-ray photoelectron spectroscopy results indicate that the conversion of the as-deposited silicon nitride into oxynitride with different composition or oxide is feasible and the process is governed by the oxidation temperature. For sample oxidized at 1050 °C for 1 h, the nitride film was converted into silicon dioxide with 7 at.% of nitrogen at the interface and the leakage current density can be reduced by several orders of magnitude. By measuring the leakage current, the barrier height (extracted from Fowler–Nordheim plot) at the dielectric/Si interface is found to be in the range of 1.14–3.08 eV for the investigated samples." @default.
• W1973170819 created "2016-06-24" @default.
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• W1973170819 date "2003-04-01" @default.
• W1973170819 modified "2023-10-01" @default.
• W1973170819 title "Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride" @default.
• W1973170819 cites W1964755284 @default.
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• W1973170819 doi "https://doi.org/10.1016/s0026-2714(03)00031-3" @default.
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