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- W1973172988 abstract "Ultra-shallow n + p junctions featuring very low reverse-bias current densities ( 3.1×10 -9 A·cm -2 at 5 V) have been successfully formed at a post-implantation annealing temperature as low as 450° C. Such a low reverse-bias current level has been achieved by eliminating residual point defects remaining after 450° C post-implantation annealing. A newly developed hydrogen radical sintering ( H * sintering) is presented as a promising method to eliminate these defects and thus improve the characteristics of junctions formed by low-temperature post-implantation annealing." @default.
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- W1973172988 date "1995-02-01" @default.
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- W1973172988 title "Reducing Reverse-Bias Current in 450°C-Annealed n<sup>+</sup>p Junction by Hydrogen Radical Sintering" @default.
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- W1973172988 doi "https://doi.org/10.1143/jjap.34.796" @default.
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