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- W1973199629 abstract "An investigation has been made of the electric field dependencies of the Raman cross-section for the electromagnetic waves scattered on the fluctuations in nonequilibrium semiconductor plasma for some cases of the orientations of external electric field, wave vector of the fluctuation wave, and the wave vector of falling wave. It has been found that in the semiconductor plasma this cross- section depends to a great extent on an external electric field, the carriers scattering mechanisms, and the energy band structure. It is shown that the analysis of the Raman wave scattering and transformation coefficients may be a very good technique for the diagnosis of the semiconductor materials for the microelectronics." @default.
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- W1973199629 date "1998-04-20" @default.
- W1973199629 modified "2023-09-23" @default.
- W1973199629 title "Use of Raman-scattering waves for the optical diagnostics of semiconductor materials for microelectronics" @default.
- W1973199629 doi "https://doi.org/10.1117/12.306249" @default.
- W1973199629 hasPublicationYear "1998" @default.
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