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- W1973201088 abstract "In this letter, we report a novel high-index-contrast silicon nitride arrayed waveguide grating (AWG) for very near-infrared wavelengths. This device is fabricated through a process compatible with a complementary metal-oxide-semiconductor fabrication line and is therefore suitable for mass fabrication. The large phase errors that usually accompany high-index-platform AWGs are partly mitigated through design and fabrication adaptions, in particular the implementation of a two-level etch scheme. Multiple devices are reported, among which a 0.3-mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> device which, after the subtraction of waveguides loss, has a -1.2 dB on-chip insertion loss at the peak of the central channel and 20-dB crosstalk for operation $sim 900$ nm with a channel spacing of 2 nm. These AWGs pave the way for numerous large-scale on-chip applications pertaining to spectroscopy and sensing." @default.
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- W1973201088 date "2015-01-15" @default.
- W1973201088 modified "2023-10-16" @default.
- W1973201088 title "Compact Silicon Nitride Arrayed Waveguide Gratings for Very Near-Infrared Wavelengths" @default.
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- W1973201088 doi "https://doi.org/10.1109/lpt.2014.2363298" @default.
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