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- W1973201901 abstract "We report an investigation of trapped positive charge in as-fabricated plasma-enhanced chemical vapor deposited SiO2 films using electrical and spin resonance techniques. We show that the positive charge results from donor-like ‘‘slow’’ interface states (‘‘anomalous positive charge’’) rather than trapped holes, and that most (∼95%) of the positive charge is not related to E′ centers. The positive charge is similar to that seen in electron-injected thermally grown SiO2, and unlike radiation-induced trapped holes." @default.
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- W1973201901 title "Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films" @default.
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- W1973201901 doi "https://doi.org/10.1063/1.103327" @default.
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