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- W1973219379 abstract "We have investigated the role of hydrogen atoms in the formation process of the hydrogenated microcrystalline silicon ( µc-Si:H) by using a layer-by-layer deposition technique in which an abundance of H atoms were supplied after the growth of every several monolayers of films. It has been found that whether or not µc-Si:H is formed is strongly dependent on the parameters (substrate temperature and waiting time before the growth of every several monolayers after H 2 plasma is turned off) which change the hydrogen coverage of the top surface. These experimental results illustrate the idea that the major role of H atoms for µc-Si:H formation is not to make “growth-zone” reactions below the top surface but to achieve sufficient hydrogen coverage of the top growing surface." @default.
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- W1973219379 date "1990-08-01" @default.
- W1973219379 modified "2023-09-26" @default.
- W1973219379 title "Role of Hydrogen Atoms in the Formation Process of Hydrogenated Microcrystalline Silicon" @default.
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- W1973219379 doi "https://doi.org/10.1143/jjap.29.l1372" @default.
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