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- W1973233063 abstract "In this study, we explore the use of Resistive RAMs (RRAMs) as candidates for programmable interconnects in FPGAs. An RRAM cell can be programmed between high resistance state and low resistance state, with an on/off ratio close to MOSFET. It provides an opportunity to use an RRAM as a routing switch at a much smaller area cost than its CMOS counterpart. RRAMs can be fabricated over CMOS circuits using CMOS-compatible processes to have a more compact gate array. Our recent work (presented in NanoArch'2011) demonstrated significant potential of area, delay, and power reduction from using RRAMs in FPGAs. But some design problems remain open. The programming of RRAM switches integrated in interconnects is one important problem. We show that the high-level architecture of programming circuits for RRAM switches should be modified to avoid potential logic hazard. Also the programming cells used in previous works have an area overhead even larger than RRAM itself. We manage to reduce this overhead significantly with utilization of the non-arbitrary pattern of RRAM integration in FPGA interconnects. In addition we suggest a novel buffering solution for FPGA interconnects in light of the low area cost of RRAM-based routing switch. We propose on-demand buffer insertion, where buffers can be connected to interconnects via RRAMs to dynamically reflect the demand of the netlist to map onto FPGA. Compared to conventional buffering solution which are pre-determined during fabrication and can only be optimized for general case, our solution shows further area savings and performance improvement. The resulting FPGA architecture using RRAM for programmable interconnects is named FPGA-RR. We provide a complete CAD flow for FPGA-RR." @default.
- W1973233063 created "2016-06-24" @default.
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- W1973233063 date "2012-02-22" @default.
- W1973233063 modified "2023-09-24" @default.
- W1973233063 title "FPGA-RR" @default.
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- W1973233063 doi "https://doi.org/10.1145/2145694.2145751" @default.
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