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- W1973262417 abstract "The influence of laser and halogen lamp illumination on the properties of n- and p-type porous silicon (PS) samples during the etching process was investigated. Changes of the microstructure induced by different illumination conditions were measured by deducing nanocrystal size distributions from Raman spectra. The size distributions are correlated with changes of the photoluminescence (PL) intensity and peak wavelength. To obtain information about the chemical composition of the layers X-ray photoemission spectra (XPS) were taken. For n-type PS a decrease of the PL intensity and a blueshift is observed with decreasing wavelength of laser illumination. In addition, shorter wavelengths result in high amounts SiO2. For p-type PS, an increase of the PL intensity up to a factor of 200 can be achieved by illumination. The nanocrystal size distributions of samples formed with different illumination wavelengths and the PL intensity are in good agreement according to the quantum model for the PL [1]. XPS investigations of p-type PS show only a small amount of Si suboxides compared with n type PS." @default.
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- W1973262417 date "1996-04-01" @default.
- W1973262417 modified "2023-09-23" @default.
- W1973262417 title "Illumination-assisted formation of porous silicon" @default.
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- W1973262417 doi "https://doi.org/10.1016/0040-6090(95)08040-6" @default.
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