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- W1973281026 abstract "Oxides with the delafossite structure (space group Rm) are of interest as wide-bandgap semiconductors, and as multiferroics. Well oriented c-axis films of CuCrO2 and CuCr0.9Mg0.1O2 have been produced on c-cut sapphire by PLD at elevated temperatures (650 °C). The lattice parameters for CuCrO2 are a = 299.6 pm and c = 1719.7 pm. The end member is insulating at room temperature with ρ ≳ 1000 Ω m whereas the Mg-doped oxide is a degenerate p-type semiconductor with ρ ≈ 1.5 x 10−4 Ω m. There is a resistivity anomaly at TN. A large negative magnetoresistance, which reaches its maximum value (≈ 300 %) in 14 T at about 2 K, persists throughout the temperature range where magnetic short range order is significant." @default.
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- W1973281026 date "2010-01-01" @default.
- W1973281026 modified "2023-09-27" @default.
- W1973281026 title "Magnetoresistance of CuCrO<sub>2</sub>-based delafossite films" @default.
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- W1973281026 doi "https://doi.org/10.1088/1742-6596/200/5/052021" @default.
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