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• W197330479 abstract "Modern epitaxial techniques, molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), allow unprecedented control—nearly on an atomic layer scale—over composition as well as doping. The advent of these advanced capabilities has led to new transistor design possibilities, with improvements based on better carrier transport properties and on “bandgap engineering” to control the flow of carriers. These improvements have resulted in performance superior to that attainable in homojunction devices. The resultant devices, heterojunction bipolar transistors (HBTs), retain the advantages of their Si predecessors but extend them to higher frequencies. The possibilities for device improvements have made the HBT field an active research area. Because of the wide range of optimization opportunities, HBT design provides a good case study to illustrate the relationship between transistor structure and circuit requirements. This chapter discusses the desired characteristics of bipolar transistors and describes the advantages of III-V materials engineering for device improvements." @default.
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• W197330479 date "1994-01-01" @default.
• W197330479 modified "2023-09-24" @default.
• W197330479 title "Heterojunction Bipolar Transistors in III—V Semiconductors" @default.
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• W197330479 doi "https://doi.org/10.1016/b978-0-12-234124-3.50009-4" @default.
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